A chemical vapor deposition apparatus is provided to maintain the concentricity of a shadow ring constantly by coupling the shadow ring to a gas injection part, thereby preventing deposition of a wafer edge. A chemical vapor deposition apparatus includes a chamber body(100) having a desired reaction chamber, and a gas injection part(200) for spraying a certain deposition gas in the reaction chamber. A support member for supporting an object to be processed is moved between a reaction position where the object is positioned on an upper surface and a waiting position where the object is spaced apart from the gas injection part. A shadow ring(300) is coupled to one side of the gas injection part.
申请公布号
KR100686725(B1)
申请公布日期
2007.02.16
申请号
KR20050090334
申请日期
2005.09.28
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, EUNG SU;YIM, SOON KYU;CHUNG, HWA JUN;LIM, KYUNG CHUN;LEE, SANG HO