发明名称 INSULATED-GATE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem that, although in the prior art one metal electrode layer is adapted to make contact with an element region and a bonding wire has been fixed onto the metal electrode layer, so that for reducing on-resistance of an apparatus it is desired that the thickness of the metal electrode layer is made thick but there is limit in accuracy of patterning, and when an Au fine line is adopted as a bonding wire, an Au/Al eutectic crystal layer is formed with the lapse of time to apply pressure to an interlayer dielectric of the element region. <P>SOLUTION: The metal electrode layer is configured as two layers. A first electrode layer is patterned with a fine separation distance according to the element region as in the prior art. In contrast, a second electrode layer may come into contact with the first electrode layer without causing any problem even if the separation distance is increased. That is, the second electrode layer may be made a desired thickness. Further, it is possible, even if volume expansion happens owing to the Au/Al eutectic layer, to prevent its stress from being transmitted to the element region by disposing a nitride film on the first electrode layer located below a wire bonded region. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007042817(A) 申请公布日期 2007.02.15
申请号 JP20050224606 申请日期 2005.08.02
申请人 SANYO ELECTRIC CO LTD 发明人 KUSHIYAMA KAZUNARI;OKADA TETSUYA;OIKAWA SHIN
分类号 H01L29/78;H01L21/3205;H01L21/336;H01L21/60;H01L23/52;H01L29/41 主分类号 H01L29/78
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