| 摘要 |
PROBLEM TO BE SOLVED: To provide a slim, thin and long integrated circuit device, and electronic equipment including the same. SOLUTION: The integrated circuit device 10 includes first and second pads PD1 and PD2; a first electrostatic discharge protection element ESD-L electrically connected to the first pad PD1; a second electrostatic discharge protection element ESD-M electrically connected to the second pad PD2; a first MOS transistor NTL1 having a withstand voltage being a first voltage; and a second MOS transistor NTM1 having a withstand voltage being a second voltage higher than the first voltage. The first electrostatic discharge protection element ESD-L is configured by a bipolar transistor or a thyristor, and the second electrostatic protective element ESD-M is configured by a diode. The first pad PD 1 is arranged on an upper layer of the first electrostatic discharge protection element ESD-L so as to overlap one part or the entire of the electrostatic discharge element ESD-L. Alternatively, the second pad PD 2 is arranged on an upper layer of the second electrostatic discharge protection element ESD-M so as to overlap one part or the entire of the second electrostatic discharge protection element ESD-M. COPYRIGHT: (C)2007,JPO&INPIT
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