| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas phase growing apparatus which can prevent corrosion of the inner wall of a reaction gas supply part, a manufacturing method of a group III nitride semiconductor substrate, and the group III nitride semiconductor substrate. SOLUTION: A production pipe 112 for producing an AlCl<SB>3</SB>gas has a cylindrical inner wall 114A, inside which a passage N for a reaction gas is formed, and an outer wall 114B installed so as to cover the outer periphery of this inner wall 114A. On the inner wall 114A, a plurality of introduction holes 114A1 are formed. An inert gas to be supplied between the inner wall 114A and the outer wall 114B is introduced to the introduction holes 114A1. By jetting of the inert gas, it can be prevented that the reaction gas comes undesirably into contact with the inner wall 114A of a production pipe body part 113 of the production pipe 112. COPYRIGHT: (C)2007,JPO&INPIT
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