发明名称 Lanthanum hafnium oxide dielectrics
摘要 Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
申请公布号 US2007037415(A1) 申请公布日期 2007.02.15
申请号 US20060584229 申请日期 2006.10.20
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L21/00 主分类号 H01L21/00
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