发明名称 |
Planarizing a semiconductor structure to form replacement metal gates |
摘要 |
A sacrificial gate structure, including nitride and fill layers, may be replaced with a metal gate electrode. The metal gate electrode may again be covered with a nitride layer covered by a fill layer. The replacement of the nitride and fill layers may reintroduce strain and provide an etch stop.
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申请公布号 |
US2007037372(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060581183 |
申请日期 |
2006.10.13 |
申请人 |
KAVALIEROS JACK;BRASK JUSTIN K;DOCZY MARK L;SHAH UDAY;BARNS CHRIS E;METZ MATTHEW V;DATTA SUMAN;CHAU ROBERT S |
发明人 |
KAVALIEROS JACK;BRASK JUSTIN K.;DOCZY MARK L.;SHAH UDAY;BARNS CHRIS E.;METZ MATTHEW V.;DATTA SUMAN;CHAU ROBERT S. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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