IN-SITU ATOMIC LAYER DEPOSITION

摘要

An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system (1, 100). The method comprises first loading a plurality of wafers (40, 110) into a process chamber (10, 102), and then pre-treating the plurality of wafers (40, 110) in the process chamber (10, 102) with a first oxidizer. After pre-treating the wafers (40, 110), and without removing the wafers (40, 110) from the process chamber (10, 102), the method then comprises depositing HfO2 on the plurality of wafers (40, 110) by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers (40, 110) in the process chamber (40, 110) to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).