发明名称 |
THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR, AND DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor with which a TFT having higher mobility of electrons (or holes) can be manufactured, a method of manufacturing the thin-film transistor, and a display device. SOLUTION: The thin-film transistor 1 has a source region S, a channel region C and a drain region D which are provided on a semiconductor thin film 4a that is crystal-grown in a lateral direction; and a gate insulation film 11 and a gate electrode 12 which are provided on the top of the channel region C. An end of the drain 10 on the channel region C side of the drain region D is formed so as to be positioned near the finish position 8 of the crystal growth. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007043142(A) |
申请公布日期 |
2007.02.15 |
申请号 |
JP20060185993 |
申请日期 |
2006.07.05 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD |
发明人 |
NAKASAKI YOSHIAKI;KAWACHI GENSHIRO;KETSUSAKO MITSUNORI;MATSUMURA MASAKIYO |
分类号 |
H01L21/336;G02F1/1345;G02F1/1368;H01L21/20;H01L21/268;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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