| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that it is difficult to provide a large-scale display device since a wiring layer having no level difference and superior adhesiveness and planarity cannot be formed on a transparent substrate. SOLUTION: Adhesiveness and planarity are improved by permitting a gate electrode or a gate wiring of a thin film transistor to have a four-layer structure by successively stacking a base adhesive layer, a catalyst layer, a wiring metal layer, and a wiring metal diffusion suppressing layer. In such a case, the base adhesive layer is formed of a resin having a structure which can be coordinated with a metal, and adhesiveness to an insulating substrate is improved. Furthermore, since diffusion of the wiring metal can be prevented by providing the wiring metal diffusion suppressing layer on the wiring metal layer, characteristics of the thin film transistor can be improved. COPYRIGHT: (C)2007,JPO&INPIT |
