发明名称 RESIST COMPOSITION AND METHOD FOR FORMING PATTERN USING THE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive composition to be used for manufacturing processes of a semiconductors such as an IC, manufacturing a circuit board of a liquid crystal or a thermal head or other photofabrication processes, and to provide a method for forming a pattern using the photosensitive composition, and in particular, to provide a photosensitive composition improved in exposure latitude and PEB (post exposure baking) temperature dependence, and to provide a method for forming a pattern using the photosensitive composition. <P>SOLUTION: The positive resist composition contains (A) a resin the solubility of which with an alkali developing liquid is increased by an effect of an acid, (B) a compound which generates an acid upon irradiation of active rays or radiation, (C) a compound expressed by general formula (C1), and (D) a solvent. The method for forming a pattern is carried out by using the above composition. In general formula (C1), R<SB>1</SB>represents a substituent; and each of R<SB>2</SB>to R<SB>5</SB>independently represents a hydrogen atom or a substituent. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007041146(A) 申请公布日期 2007.02.15
申请号 JP20050223135 申请日期 2005.08.01
申请人 FUJIFILM CORP 发明人 IWATO KAORU
分类号 G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/004
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