发明名称 RESIST COMPOSITION AND METHOD FOR FORMING PATTERN USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive composition to be used for a manufacturing process of a semiconductor such as an IC, manufacturing a circuit board of a liquid crystal, thermal head or the like or other photofabrication processes, and to provide a method for forming a pattern using the photosensitive composition, particularly, to provide a photosensitive composition excellent in avoiding development defects and improved in line edge roughness and pattern collapse even for formation of a fine pattern in a size of 100 nm or less, and to provide a method for forming a pattern using the photosensitive composition. <P>SOLUTION: The positive resist composition contains (A) a compound which generates an acid upon irradiation of active rays or radiation, (B) a resin decomposed by an effect of an acid to increase the solubility in an alkali developing liquid, and (F) a solvent, wherein the resin of the component (B) has a repeating unit (Ba) having a diamantane structure and having 3,000 to 30,000 weight average molecular weight and 1.1 to 3.0 dispersion degree. The method for forming a pattern is carried out by using the above composition. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007041200(A) 申请公布日期 2007.02.15
申请号 JP20050224001 申请日期 2005.08.02
申请人 FUJIFILM CORP 发明人 KODAMA KUNIHIKO;WADA KENJI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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