| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V compound semiconductor epitaxial wafer which is capable of improving a device in insulation properties by improving a buffer layer and reducing a leakage current when the device is in operation. SOLUTION: A buffer layer 11, a channel layer 14, spacer layers 13, and 15, carrier supply layers 12 and 16, and a contact layer 18, are epitaxially grown on a semi-insulating compound semiconductor substrate 10 for the formation of a group III-V compound semiconductor. A p-layer 22 and an n-layer 23 are formed in the buffer layer 11, using an n-GaAs layer, a p-GaAs layer, or an n-Al<SB>x</SB>Ga<SB>(1-x)</SB>As layer, a p-Al<SB>x</SB>Ga<SB>(1-x)</SB>As layer which have each a carrier concentration of≤1E 17 cm<SP>-3</SP>. COPYRIGHT: (C)2007,JPO&INPIT
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