METHOD OF FORMING METALLIC FILM AND PROGRAM-STORING RECORDING MEDIUM

摘要

It is intended to form a metallic film with resistance lower than in the prior art through controlling of crystal structure. The method may comprise the first tungsten film forming step and the second tungsten film forming step. In the first tungsten film forming step, the step of feeding, for example, WF<SUB>6</SUB> gas as a metallic raw material gas and the step of feeding, for example,SiH<SUB>4</SUB> gas as a hydrogen compound gas are alternately repeatedly carried out with the purging step of feeding an inert gas, for example, Ar gas or N<SUB>2</SUB> gas interposed between the above steps to thereby form the first tungsten film containing amorphous matter. In the second tungsten film forming step, the WF<SUB>6</SUB> gas and a reducing gas, for example, H<SUB>2</SUB> gas are simultaneously fed over the first tungsten film so as to form the second tungsten film. The ratio of amorphous matter contained in the first tungsten film is controlled by varying the execution time of the purging step ensuing the step of feeding SiH<SUB>4</SUB> gas.