发明名称 Write protection method of sequential access semiconductor storage device
摘要 A semiconductor device 10 sets a pass-through flag to ON when the top address of a write-prohibited area is passed. When a request to write data to a write-restricted area WRA is received, the semiconductor memory device 10 determines whether or not the pass-through flag is set to ON, and if the pass-through flag is not set to ON, the semiconductor memory device 10 executes writing of the data to the write-restricted area. On the other hand, if the pass-through flag is set to ON, the semiconductor memory device 10 does not execute writing of the data to the write-restricted area.
申请公布号 AU2006277451(A1) 申请公布日期 2007.02.15
申请号 AU20060277451 申请日期 2006.07.26
申请人 SEIKO EPSON CORPORATION 发明人 NOBORU ASAUCHI
分类号 G11C16/02;B41J2/175;G06F3/12;G06F12/14 主分类号 G11C16/02
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