| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for efficiently and uniformly activating a p-type gallium-nitride-based compound semiconductor containing p-type impurities without causing compositional change, contamination or the like and producing a large quantity of the p-type gallium-nitride-based compound semiconductors with approximately constant quality more inexpensively and efficiently than conventional ones, and a gallium-nitride-based compound semiconductor element containing the p-type gallium-nitride-based compound semiconductor manufactured by the mentioned method. <P>SOLUTION: The manufacturing method includes a step of causing a current to flow between a conductive substrate 3 having the gallium-nitride-based compound semiconductor 2 containing the p-type impurities formed, while it is soaked in an electrolyte 1 with the substrate 3 as an anode and a cathode 4 for activating the p-type impurities. The gallium-nitride-based compound semiconductor element includes the p-type gallium-nitride-based compound semiconductor manufactured by the manufacturing method. <P>COPYRIGHT: (C)2007,JPO&INPIT |
