| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new oxide semiconductor capable of taking both conductivity types. <P>SOLUTION: Niobium (Nb) has been added to a metal oxide comprising bismuth, titanium, and oxygen as an impurity. The metal oxide comprising bismuth (Bi), titanium (Ti), and oxygen is, for example, Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>. In Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>, Nb is a donor to be ionized by releasing electrons to other adjacent Ti ions when creating a homopolar bond by entering a lattice point of Ti. As a result, Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>to which Nb has been added becomes an n-type semiconductor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
