| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a semiconductor device having good field relaxation effect and exhibiting good breakdown voltage characteristics and gain characteristics even in high frequency region. <P>SOLUTION: Between a gate electrode and a drain electrode, field plate electrodes are formed at a predetermined distance from the gate electrode and connected with the drain electrode via MIM capacitors stacked in two layers and an inductor compensating for a time lag occurring through the MIM capacitor thus reducing stray capacitance becoming feedback capacitance to the gate electrode side. An inverted voltage waveform from the drain electrode having an amplitude larger than the exciting voltage of the gate electrode is applied to the field plate electrode thus attaining good field relaxation effect. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
