发明名称 |
CMOS image sensor and method for fabricating the same |
摘要 |
A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality of color filters on the passivation layer corresponding to the photodiodes; a planarization layer on an entire surface of the semiconductor substrate including the color filters; and a microlens on the planarization layer corresponding to each of the color filters and having a bottom diameter of 2.5 to 3.0 mum.
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申请公布号 |
US2007034916(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060504559 |
申请日期 |
2006.08.14 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SANG CHO E. |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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