| 摘要 |
In a solid-state image pickup device according to the present invention, groove-like recesses are formed on a semiconductor substrate, and first wiring for vertical transfer electrode use are formed in the groove-like recesses, in order to reduce the distance between the semiconductor substrate and the microlens. According to the solid-state image pickup device, difference in level of a CCD image sensor caused by overlapping the first and second wirings for vertical transfer electrode use can be eliminated, and thereby the distance between the photoelectric conversion elements and the microlens can be reduced, and thus the sensitivity of the CCD image sensor can be reduced.
|
