| 摘要 |
A semiconductor device, including: a semiconductor layer; an electrode pad formed above the semiconductor layer; an insulating layer formed over the electrode pad and having an opening which exposes at least part of the electrode pad; and a bump formed at least in the opening. The bump includes: a first bump layer formed in the opening; an underlayer formed above the first bump layer and the insulating layer positioned around the first bump layer; and a second bump layer formed on the underlayer.
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