发明名称 |
Semiconductor device including field effect transistor for use as a high-speed switching device and a power device |
摘要 |
A body layer of a first conductivity type is formed on a semiconductor substrate, and a source layer of a second conductivity type is formed in a surface region of the body layer. An offset layer of the second conductivity type is formed on the semiconductor substrate, and a drain layer of the second conductivity type is formed in a surface region of the offset layer. An insulating film is embedded in a trench formed in the surface region of the offset layer between the source layer and the drain layer. A gate insulating film is formed on the body layer and the offset layer between the source layer and the insulating film. A gate electrode is formed on the gate insulating film. A first peak of an impurity concentration profile in the offset layer is formed at a position deeper than the insulating film.
|
申请公布号 |
US2007034894(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060501715 |
申请日期 |
2006.08.10 |
申请人 |
KAWAGUCHI YUSUKE;YASUHARA NORIO;MATSUDAI TOMOKO;MATSUSHITA KENICHI |
发明人 |
KAWAGUCHI YUSUKE;YASUHARA NORIO;MATSUDAI TOMOKO;MATSUSHITA KENICHI |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|