| 摘要 |
A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.
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