STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTALLINITY IN THE STRAINED SILICON LAYER
摘要
<p>This invention generally relates to strained silicon on insulator (SSOI) structure, and to a process for making the same. The process includes a high temperature thermal anneal of a SSOI structure to improve the crystallinity of the strained silicon layer, while maintaining the strain present therein.</p>
申请公布号
WO2007019260(A1)
申请公布日期
2007.02.15
申请号
WO2006US30348
申请日期
2006.08.01
申请人
MEMC ELECTRONIC MATERIALS, INC.;SEACRIST, MICHAEL, R.;FEI, LU
