SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to increase operation speed by forming a channel having a wide width. A semiconductor substrate has a base and protruded portions that are extended to a first direction on the base and separated from each other to a second direction substantially perpendicular with the first direction. A first dielectric(300) is formed on sides of the protruded portions. A first conductive pattern(400) is formed on the first dielectric. A first impurity region(111) is formed on an upper portion of the base. An upper of the respective protruded portions are partially eliminated to form convex portions(121) on a lower of the respective protruded portions. A second impurity region is formed on an upper portion of the respective convex portions.