| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide corrosion-proofing technology for a metal interconnect line formed by a chemical mechanical polishing (CMP) method. <P>SOLUTION: The method comprises a step for forming a metal layer containing copper as a main component on primary major face of a wafer having a primary insulating film in which concave groove pattern is formed, a step for eliminating the metal layer on the front surface of the primary insulating film and outside of the concave groove by the CMP, a step for transporting the wafer from which the metal layer is removed to a post-cleaning section being made a shielding structure, a step for post-cleaning the primary major face of the wafer with alkaline or alkalescent chemicals by scrub or brush cleaning in the post-cleaning section, and a step for carrying out spin drying for the primary major face of the wafer to which the post-cleaning is performed and carries out the steps (b) to (e) by a sheet feed method. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
