发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of reducing breakage of a bonding wire even in an environment having great temperature change or pressure actuation, and elongating a lifetime. <P>SOLUTION: This semiconductor pressure sensor includes a resin package 1 having a recessed part 1a; a lead 2 whose one end is exposed to the recessed part 1a and whose other end is drawn out to the outside of the package 1, integrated with the package 1 by insert molding; a sensor chip 3 provided on the recessed part 1a, for detecting the pressure; and the bonding wire 4 for connecting electrically the sensor chip 3 to the lead 2. In the sensor, the recessed part 1a side of the interface between the lead 2 and the package 1 is coated by the first insulating protection resin part 6, and the bonding wire 4 is coated by the second protection resin part 7 which is softer than the first protection resin part 6. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007040772(A) 申请公布日期 2007.02.15
申请号 JP20050223699 申请日期 2005.08.02
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAHATA YOSHIMITSU;NAKAMURA HIROSHI;TARUYA KIMIAKI;ASADA SHINSUKE
分类号 G01L9/00 主分类号 G01L9/00
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