CRYSTAL PRODUCTION METHOD USING SUPERCRITICAL SOLVENT, CRYSTAL GROWTH APPARATUS, CRYSTAL, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solvothermal crystal production method whereby the position of deposition of a crystal is controlled, the yield of a crystal is improved, and the purity of a crystal is heightened by preventing the crystal from being contaminated and to provide a crystal production apparatus therefor.

SOLUTION: The crystal production method comprises performing crystal growth by the solvothermal method in the presence of a specified amount of a substance differing in critical density from a solvent in a reaction vessel. The crystal production apparatus therefor is also provided.

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