| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which does not suffer from the separation and destruction of a low dielectric constant film even if it is applied with a temperature load. <P>SOLUTION: The semiconductor device comprises a wiring board 2 or a lead frame mounted with a semiconductor element 3 having a multilayered wiring layer formed on the surface thereof with the multilayered wiring layer including at least one layer interlayer-insulated by an interconnection insulation film having a low dielectric constant; a die attach material 1 for fixing the semiconductor element 3 on the wiring board 2 or the lead frame; wires (bonding wires) 4 for connecting connection electrodes 8 of the semiconductor element 3 to connection electrodes 9 of the wiring board 2 or to the lead frame; and a resin sealing body 5 for sealing the semiconductor element, part of the wiring board or the lead frame, the die attach material, and the wires 4. The die attach material 1 covers from the bottom face of the semiconductor element opposite to the surface of the wiring board or the lead frame to the side face connected to the bottom face to a peripheral region 1a of the surface connected to the side face. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
