发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a thinned substrate with proper yield. SOLUTION: After a protective layer has been formed in a predetermined portion of a substrate (a portion covering at least the end face of the substrate), the substrate is ground and polished. More specifically, an element layer having a plurality of integrated circuits is formed on one surface of the substrate, a protective layer is formed in contact with at least the end face of the substrate, the substrate is made thin (by grinding and polishing the other surface of the substrate, for example), the protective layer is removed, and then the substrate and the element layer are segmented, thus forming a laminate having a layer provided with at least one of the plurality of integrated circuits. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007043101(A) 申请公布日期 2007.02.15
申请号 JP20060162592 申请日期 2006.06.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TSURUME TAKUYA;KUSUMOTO NAOTO
分类号 H01L21/304;H01L21/301;H01L29/786 主分类号 H01L21/304
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