| 摘要 |
PROBLEM TO BE SOLVED: To enable a crystallization process and a circuit forming process to be carried out through a process of performing an alignment operation using an alignment mark, even if a light irradiation process is carried out using a flash lamp. SOLUTION: A workpiece 10 is composed of substrates 11 and 12 whose surfaces are formed of insulating material, a semiconductor thin film 13 formed on the substrates 11 and 12, and a capping layer 14 formed on the semiconductor thin film 13. An alignment mark 15 is formed on the workpiece 10 near a position where a prescribed TFT is formed by irradiation with a first laser ray L1. The alignment mark 15 is detected, and a predetermined crystallization position is irradiated with a second excimer laser ray L2 for the formation of a crystallized region 22 which is large in particle diameter. After the capping layer 14 is removed on a peripheral region containing the alignment mark 15, microcrystalline parts which are unevenly distributed in the crystal region enhanced in particle diameter are recrystallized by irradiation with the light of a flash lamp. COPYRIGHT: (C)2007,JPO&INPIT
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