发明名称 Self aligned magnetoresistive sensor and method of manufacture thereof
摘要 A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.
申请公布号 US2007033799(A1) 申请公布日期 2007.02.15
申请号 US20050204876 申请日期 2005.08.15
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES 发明人 PINARBASI MUSTAFA M.
分类号 G11B5/187 主分类号 G11B5/187
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