发明名称 |
Schotiky barrier tunnel transistor and method of manufacturing the same |
摘要 |
Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
|
申请公布号 |
US2007034951(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060485837 |
申请日期 |
2006.07.13 |
申请人 |
KIM YARK Y;LEE SEONG J;JANG MOON G;CHOI CHEL J;JUN MYUNG S;PARK BYOUNG C |
发明人 |
KIM YARK Y.;LEE SEONG J.;JANG MOON G.;CHOI CHEL J.;JUN MYUNG S.;PARK BYOUNG C. |
分类号 |
H01L27/12;H01L27/01;H01L31/0392 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|