| 摘要 |
An organic electroluminescence display device and a manufacturing method thereof are provided to prevent damage to an element caused by high heat of a laser when the laser is irradiated to a glass frit. In an organic electroluminescence display device, a thin film transistor has a semiconductor layer, a gate dielectric layer(330), a gate electrode(340a), an interlayer dielectric layer(350), and source/drain electrodes(360a,360b). A first electrode(380) is electrically connected to the thin film transistor. A pixel defined layer(390) is located on the first electrode(380). An organic layer(400) includes at least a light emitting layer formed on the first electrode(380) and the pixel defined layer(390). A substrate(300) has a pixel region(I) and a non-pixel region(II) which is a region except the pixel region(I). The pixel region(I) has a second electrode(410). The second electrode(410) is located on the organic layer(400). An encapsulation substrate(420) encapsulates the substrate(300). In the non-pixel region(II), the interlayer dielectric layer(350) is located on a first metal line(340b). Second and third metal lines are located on an upper part of the interlayer dielectric layer(350) formed on an upper surface of the first metal line(340b). A glass frit(430) is located on the interlayer dielectric layer(350) having a gap with the first metal line(340b). The glass frit(430) encapsulates the substrate(300) and the encapsulation substrate(420). |
