| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a slim, thin and long integrated circuit device hardly causing electrostatic discharge damage, and electronic equipment incorporating the same. <P>SOLUTION: The integrated circuit device 10 includes a pad, an electrostatic discharge protection element electrically connected to the pad, and a transistor to be protected with the electrostatic discharge protection element. The pad is arranged on an upper layer of an impurity region so that the pad overlaps one part or entire part of the impurity region forming the electrostatic protective element. A conductive layer for electrically connecting the impurity region to a gate electrode of the transistor, or a conductive layer for electrically connecting the impurity region to a drain region of the transistor is electrically connected to the pad and is electrically connected to the impurity region via a contact hole of an interlayer insulation film provided on the impurity region. <P>COPYRIGHT: (C)2007,JPO&INPIT |
