| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium-nitride-based compound semiconductor light-emitting device that has improved power-light conversion efficiency and generates small heat, and can extract emission to the outside efficiently. <P>SOLUTION: The light-emitting device contains a laminate of a gallium-nitride-based compound semiconductor. The laminate of the light-emitting device has a first surface and a second one that opposes the first one, and the second surface is a light extraction direction. A metal electrode is installed on the first surface, and an electrode made of a conductive, transparent material is installed on the second surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
