| 摘要 |
PROBLEM TO BE SOLVED: To control an increase of a natural oxide film, to further control the generation of particles, and to improve the quality of semiconductor devices. SOLUTION: The substrate-processing apparatus comprises reactors 1 and 4 for processing a substrate 10, a substrate-holding tool 8 for supporting the substrate 10 in the reactors, a spare chamber 6 that is connected to the reactors and accommodates the substrate-holding tool, a means for taking in and out the substrate-holding tool between the spare chamber and the reactors, and a means 19 for controlling the atmospheric pressure of the spare chamber and the reactor when the substrate-holding tool on which the substrate has been mounted is loaded to the reactor which is kept at a substrate-processing temperature, higher than the atmospheric pressure at the time that the spare chamber is once evacuated and at the same time lower than an air pressure, after the substrate is mounted on the substrate-holding tool in the spare chamber. COPYRIGHT: (C)2007,JPO&INPIT
|
