| 摘要 |
PROBLEM TO BE SOLVED: To reduce an error rate of data decipherment at the same time that data are written into a unit without influencing a magnetic resistance state of reference unit by suitably changing a write-in magnetic field efficiency of the reference unit in a magnetic random access memory, or MRAM, structure. SOLUTION: A magnetic memory array is constituted by a magnetic memory unit comprising a first fixed ferromagnetism layer, a first free ferromagnetism layer, and a first insulating layer arranged between the first fixed ferromagnetism layer and first free ferromagnetism layer; a reference magnetic memory unit comprising a second fixed ferromagnetism layer, a second free ferromagnetism layer, and a second insulating layer arranged between the second fixed ferromagnetism layer and second free ferromagnetism layer; a first bit line applying a first write-in magnetic field to the magnetic memory unit; a second bit line applying a second write-in magnetic field to the reference magnetic memory unit; and a word line applying a third write-in magnetic field and fourth write-in magnetic field smaller than the above-mentioned third write-in magnetic field to the magnetic memory unit and reference magnetic memory unit, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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