| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor excellent in writing characteristics and retention characteristics of information and its manufacturing method, and to provide a nonvolatile memory element and a semiconductor device comprising it. SOLUTION: The method for manufacturing the transistor provided in the semiconductor device comprises the steps of laminating a first oxide film, a nitride film, a second oxide film, and a gate electrode film on a semiconductor substrate; then thermally oxidation treating the first oxide film left on the surface of the semiconductor substrate by removing a nitride film to be other than the gate, the second oxide film, and the gate electrode film; and forming the first oxide film in the vicinity of the peripheral part of the gate with its film thickness increased. COPYRIGHT: (C)2007,JPO&INPIT
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