发明名称 NON-EMBEDDING RIDGE SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser which suppresses the waveguide of the light in the high order mode to be solved as a problem, namely which is a high-output semiconductor laser using the non-embedding ridge structure with little internal loss capable of forming a long resonator. SOLUTION: A non-embedding ridge semiconductor laser comprises a substrate 14, an active layer 12 formed on the substrate 14, and semiconductor layers 18-20 which are formed on the active layer 12 and have grooves 131 and 132 in the inside. The active layer 12 is oscillated by an oscillation mode having a first polarization direction, formed on the substrate 14, and is provided with an absorption layer 16 for absorbing the light of a second polarization direction perpendicular to the first polarization direction among lights emitted in the active layer 12. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007042837(A) 申请公布日期 2007.02.15
申请号 JP20050224978 申请日期 2005.08.03
申请人 NEC ELECTRONICS CORP 发明人 ARAKI RYUHEI;TADA KENTARO
分类号 H01S5/22 主分类号 H01S5/22
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