| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can provide a large pn junction area in a pn junction diode and a bipolar transistor even if a thinner SOI layer is formed in an SOI device. SOLUTION: In this semiconductor device, a MOS transistor 10N and a pn junction diode 30 are formed on an SOI substrate where an embedded oxide film layer 2 and a semiconductor film 3P are sequentially laminated on a p-type semiconductor substrate 1. Moreover, the pn junction diode 30 is formed by forming a p-type high concentration diffusing layer 32P and an n-type high concentration diffusing layer 33N are formed in an epitaxial layer grown on a region above the semiconductor substrate 1 obtained by removing the embedded oxide film layer 2 and the semiconductor film 3P. COPYRIGHT: (C)2007,JPO&INPIT
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