发明名称 Insulated gate semiconductor device and manufacturing method thereof
摘要 Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.
申请公布号 US2007034943(A1) 申请公布日期 2007.02.15
申请号 US20060496723 申请日期 2006.08.01
申请人 SANYO ELECTRIC CO., LTD. 发明人 KUSHIYAMA KAZUNARI;OKADA TETSUYA;OIKAWA MAKOTO
分类号 H01L29/94;H01L21/336 主分类号 H01L29/94
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