| 摘要 |
A semiconductor sensor production method includes the steps of (A) forming a first etching mask layer on a support part segment of a backside semiconductor layer, except on a portion of the support part segment which portion is along edges of the support part segment; (B) forming a second etching mask layer on the support part segment and a proof mass part segment of the backside semiconductor layer; (C) selectively removing segments of the back side semiconductor layer between the proof mass part segment and the support part segment by performing etching; (D) making the proof mass part segment of the back side semiconductor layer thinner than the support part segment of the back side semiconductor layer by performing etching; and (E) removing the first etching mask layer by using a wet etching method.
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