| 摘要 |
<p>This invention provides a process for producing a semiconductor device having a multilayer wiring structure and comprising an insulating layer, including a low-permittivity film, and wiring. An opening is provided in an insulating layer formed of a low-permittivity film by dry etching. Further, an opening is formed so as to expose the surface of first wiring, and the surface of the opening in the insulating layer and the wiring is washed with a cleaning liquid, followed by rinsing with a rinsing liquid containing any one material, selected from the group consisting of carbonic acid and organic acids, and water. Next, a neutral or alkaline hydrogen gas dissolved water is supplied to the surface of the substrate for washing. After drying, an electrically conductive material is filled into the opening to form via and second wiring.</p> |
