| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the method of manufacturing a nitride semiconductor element, small in a contact resistance between a p-type layer and an electrode, and capable of increasing the carrier concentration in the p-type layer, by omitting a process for annealing wherein impurities are readily adhered and keeping crean the surface of the p-type layer. <P>SOLUTION: An epitaxial growth layer 6 including the p-type layer 5 at least on the surface is formed by the vapor phase epitaxial growth of the nitride semiconductor layer on a substrate 1 to grow the most front surface layer 5 of the epitaxial growth layer 6. Thereafter, a protective layer 7 consisting of In<SB>x</SB>Ga<SB>1-x</SB>N (0<x≤1) is grown by using organic nitrogen material gas and nitrogen carrier gas succeedingly in the same growth device (a). Then, at least part of the protective layer 7 is removed through wet etching by dipping it into etchant 12 before forming the electrode by connecting to the p-type layer 5 (b). <P>COPYRIGHT: (C)2007,JPO&INPIT |
