| 摘要 |
PROBLEM TO BE SOLVED: To provide an inverter circuit used for an electro-optic device. SOLUTION: An N-channel type thin film transistor in the inverter comprises a semiconductor layer where a channel region and a plurality of N-type impurity regions are formed, a gate insulating film disposed on the semiconductor layer, and a gate electrode formed on the gate insulating film and overlapping at least one of the N-type impurity regions. A P-channel type thin film transistor in the inverter comprises a semiconductor layer where a channel region and a plurality of P-type impurity regions are formed, a gate insulating film disposed on the semiconductor layer, and a gate electrode formed on the gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT |
