NANO PARTICLE DISPERSION LIQUID, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a semiconductor device having improved electrical performance using a nano particle dispersion liquid. SOLUTION: An oxide semiconductor thin film 22 is formed by using a nano particle dispersion liquid containing a metal oxide nano particle having an average particle size of 50 nm or smaller selected from a compound expressed by an expression I: ZnXMYInZO(X+1.5Y+1.5Z)(in the expression, M indicates at least one element in aluminum, iron, and gallium; a ratio X/Y ranges from 0.2 to 10; and a ratio Y/Z ranges from 0.1 to 2.5) or an expression I': ZnX'InZ'O(X'+1.5Z')(in the expression, a ratio X'/Z' ranges from 0.5 to 8), and a dispersion medium. COPYRIGHT: (C)2007,JPO&INPIT