发明名称 Capacitor structure for two-transistor dram memory cell and method of forming same
摘要 A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a capacitor electrode being common to only the pair of electrically separated capacitor electrodes.
申请公布号 US2007034928(A1) 申请公布日期 2007.02.15
申请号 US20050200667 申请日期 2005.08.10
申请人 MICRON TECHNOLOGY, INC. 发明人 COOK KEITH;ROBERTS CEREDIG
分类号 H01L29/94;H01L27/108;H01L29/76;H01L31/119 主分类号 H01L29/94
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