发明名称 |
Capacitor structure for two-transistor dram memory cell and method of forming same |
摘要 |
A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a capacitor electrode being common to only the pair of electrically separated capacitor electrodes.
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申请公布号 |
US2007034928(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20050200667 |
申请日期 |
2005.08.10 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
COOK KEITH;ROBERTS CEREDIG |
分类号 |
H01L29/94;H01L27/108;H01L29/76;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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