发明名称 |
Trench storage capacitor |
摘要 |
A trench storage capacitor includes a buried plate that is lengthened by a doped silicon layer to right over the collar insulating layer. The conductor layer of the trench storage capacitor is preferably applied to a "buried" collar insulating layer and masked with the aid of a protective layer fabricated by ALD. In an exemplary embodiment, the conductor layer is composed of amorphous silicon, which is used as an HSG layer in a lower trench region.
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申请公布号 |
US2007034927(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20050272038 |
申请日期 |
2005.11.14 |
申请人 |
SEIDL HARALD;MANGER DIRK;GOLDBACH MATTHIAS;BIRNER ALBERT;SLESAZECK STEFAN |
发明人 |
SEIDL HARALD;MANGER DIRK;GOLDBACH MATTHIAS;BIRNER ALBERT;SLESAZECK STEFAN |
分类号 |
H01L29/94;H01L21/8242;H01L27/108 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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