| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in electric connection reliability, and an electronic device. <P>SOLUTION: The semiconductor device 100 includes a semiconductor substrate 10 having an electrode pad 14 and a passivation film 16; a resin protrusion 20 formed on the upper part of the semiconductor substrate 10; a resin portion 22 formed on the upper part of the semiconductor substrate 10 so as to have a height not exceeding the resin protrusion 20; a conductive layer 30 electrically connected to the electrode pad 14, and formed so as to pass through the upper part of the resin protrusion 20 from the upper part of the electrode pad 14 and reach the upper part of the resin portion 22. The conductive layer 30 is formed so as to cover the entire resin portion 22, and to contact the passivation film 16 in an entire peripheral region of the resin portion 22. <P>COPYRIGHT: (C)2007,JPO&INPIT |
