| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a silicon-rich nanocrystal structure that uses an atomic layer deposition process, and to provide a method of manufacturing nonvolatile semiconductor devices. SOLUTION: A silicon-rich chemical adsorption layer is formed on an object, by feeding a first gas containing a first silicon compound onto the object. After a silicon-rich insulating layer is formed on the object, by feeding a second gas containing oxygen onto the silicon-rich chemical adsorption layer, a nanocrystal layer is formed on the silicon-rich insulating layer, by feeding a third gas containing a second silicon compound onto the silicon-rich insulating layer. Such steps are repeated to form a silicon-rich nanocrystal structure, including a plurality of silicon-rich insulating layers and silicon nanocrystal layers on the object. Through the atomic layer deposition process, a silicon-rich nanocrystal structure that includes silicon-rich insulating layers and silicon-rich nanocrystal layers, and having a high silicon content and superior step coverage can be formed. COPYRIGHT: (C)2007,JPO&INPIT
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